inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor BUZ11 description static drain-source on-resistance : r ds(on) = 0.04 (max) soa is power dissipation limited high input impedance applications designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 50 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=37 30 a p tot total dissipation@tc=25 75 w t j max. operating junction temperature -55~150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.67 /w r th j-a thermal resistance,junction to ambient 75 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor BUZ11 electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 50 v v gs(th) gate threshold voltage v ds = v gs ; i d = 1ma 2.1 4 v r ds(on) drain-source on-stage resistance v gs = 10v; i d = 15a 0.04 i gss gate source leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 50v; v gs = 0 250 ua v sd diode forward voltage i f = 60a; v gs = 0 2.6 v pdf pdffactory pro www.fineprint.cn
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